JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2SK3019 N-channel MOSFET I V R MAX D (BR)DSS DS(on) SOT-523 8 4 V 3 0 V 100m A 13 2.5V 1. GATE 2. SOURCE 3. DRAIN FEATURE APPLICATION z Low on-resistance z Interfacing , Switching z Fast switching speed z Low voltage drive makes this device ideal for Portable equipment z Easily designed drive circuits z Easy to parallel Equivalent Circuit MARKING MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Unit Symbol Parameter Value VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID Continuous Drain Current 0.1 A RJA Thermal Resistance, Junction-to-Ambient 833 /W PD Power Dissipation 0.15 W TJ Junction Temperature 150 Tstg Storage Temperature -55~+150 Rev. - 1.0 www.jscj-elec.com 1 MOSFET ELECTRICAL CHARACTERISTICS T =25 unless otherwise specified a Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10A 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 1 A Gate Source leakage current IGSS VGS =20V, VDS = 0V 2 A Gate Threshold Voltage VGS(th) VDS = 3V, ID =100A 0.8 1.5 V 3.8 VGS = 4V, ID =10mA 8 Drain-Source On-Resistance RDS(on) 6 VGS =2.5V,ID =1mA 13 Forward Transconductance gFS VDS =3V, ID = 10mA 20 mS Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss VDS =5V,VGS =0V,f =1MHz 9 pF Reverse Transfer Capacitance Crss 4 pF Switching Characteristics* Turn-On Delay Time td(on) 15 ns Rise Time tr VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10, RL=500, Turn-Off Delay Time td(off) 80 ns Fall Time tf 80 ns * These parameters have no way to verify. www.jscj-elec.com Rev. - 1.0 2