JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate MOSFETS 2SK3018 N-channel MOSFET SOT-23 FEATURES z Low on-resistance z Fast switching speed 1. GATE z Low voltage drive makes this device ideal for portable equipment 2. SOURCE z Easily designed drive circuits 3. DRAIN z Easy to parallel Marking: KN Equivalent circuit MOSFET MAXIMUM RATINGS (Ta = 25C unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V ID Continuous Drain Current 0.1 A PD Power Dissipation 0.35 W TJ Junction Temperature 150 Tstg Storage Temperature -55~+ 150 RJA Thermal Resistance, Junction-to-Ambient 357 /W MOSFET ELECTRICAL CHARACTERISTICS(Ta=25 unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Units Off Characteristics Drain-Source Breakdown Voltage VDS VGS = 0V, ID = 10A 30 V Zero Gate Voltage Drain Current IDSS VDS =30V,VGS = 0V 0.2 A Gate Source leakage current IGSS A VGS =20V, VDS = 0V 2 Gate Threshold Voltage VGS(th) VDS = 3V, ID =100A 0.8 1.5 V VGS = 4V, ID =10mA 8 Drain-Source On-Resistance RDS(on) VGS =2.5V,ID =1mA 13 Forward Transconductance gFS VDS =3V, ID = 10mA mS 20 Dynamic Characteristics* Input Capacitance Ciss 13 pF Output Capacitance Coss VDS =5V,VGS =0V,f =1MHz 9 pF Reverse Transfer Capacitance Crss 4 pF Switching Characteristics* Turn-On Delay Time td(on) 15 ns Rise Time tr VGS =5V, VDD =5V, 35 ns ID =10mA, Rg=10, RL=500, Turn-Off Delay Time td(off) 80 ns Fall Time tf 80 ns * These parameters have no way to verify. B,Mar,2014Typical Characteristics 2SK3018 Output Characteristics Transfer Characteristics 0.20 200 4.0V V =3.0V T =25 GS a 100 3.5V Pulsed 0.15 30 10 V =2.5V GS 0.10 3 1 0.05 V =2.0V GS V =3V DS 0.3 T =25 a V =1.5V Pulsed GS 0.00 0.1 01 23 45 012 34 DRAIN TO SOURCE VOLTAGE V (V) GATE TO SOURCE VOLTAGE V (V) DS GS R I R V DS(ON) D DS(ON) GS 60 15 T =25 T =25 a a Pulsed Pulsed 40 10 I =100mA D 20 5 V =2.5V GS I =50mA D V =4V GS 0 0 1 3 10 30 100 0 5 10 15 20 200 DRAIN CURRENT I (mA) GATE TO SOURCE VOLTAGE V (V) D GS I V S SD 200 V =0V GS 100 T =25 a Pulsed 30 10 3 1 0.3 0.1 0.2 0.4 0.6 0.8 1.0 SOURCE TO DRAIN VOLTAGE V (V) SD B,Mar,2014 SOURCE CURRENT I (mA) DRAIN CURRENT I (A) ON-RESISTANCE R ( ) D S DS(ON) ON-RESISTANCE R ( ) DRAIN CURRENT I (mA) DS(ON) D