NPN SILICON GERMANIUM RF TRANSISTOR NESG3031M05 NPN SiGe RF TRANSISTOR FOR LOW NOISE, HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M05, 2012 PKG) FEATURES The device is an ideal choice for low noise, high-gain amplification NF = 0.6 dB TYP., Ga = 16.0 dB TYP. VCE = 2 V, IC = 6 mA, f = 2.4 GHz NF = 0.95 dB TYP., Ga = 10.0 dB TYP. VCE = 2 V, IC = 6 mA, f = 5.2 GHz NF = 1.1 dB TYP., Ga = 9.5 dB TYP. VCE = 2 V, IC = 6 mA, f = 5.8 GHz Maximum stable power gain: MSG = 14.0 dB TYP. VCE = 3 V, IC = 20 mA, f = 5.8 GHz SiGe HBT technology (UHS3) adopted: fmax = 110 GHz Flat-lead 4-pin thin-type super minimold (M05, 2012 PKG) <R> ORDERING INFORMATION Part Number Order Number Package Quantity Supplying Form NESG3031M05 NESG3031M05-A Flat-lead 4-pin thin-type super 50 pcs 8 mm w ide embossed taping minimold (M05, 2012 PKG) (Non reel) Pin 3 (Collector), Pin 4 (Emitter) face the (Pb-Free) perforation side of the tape NESG3031M05-T1 NESG3031M05-T1-A 3 kpcs/reel Remark To order evaluation samples, contact your nearby sales office. Unit sample quantity is 50 pcs. ABSOLUTE MAXIMUM RATINGS (TA = +25C) Parameter Symbol Ratings Unit Collector to Base Voltage VCBO 12.0 V Collector to Emitter Voltage VCEO 4.3 V Emitter to Base Voltage VEBO 1.5 V Collector Current IC 35 mA Note Total Pow er Dissipation Ptot 150 mW Junction Temperature Tj 150 C Storage Temperature Tstg 65 to +150 C 2 Note Mounted on 1.08 cm 1.0 mm (t) glass epoxy PWB Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge Document No. PU10414EJ04V0DS (4th edition) Date Published December 2008 NS The mark <R> show s major revised points. The revised points can be easily searched by copying an<R in the PDF file and specifying it in theFind w hat field. NESG3031M05 ELECTRICAL CHARACTERISTICS (TA = +25C) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit DC Characteristics Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA 100 nA Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA 100 nA Note 1 DC Current Gain hFE VCE = 2 V, IC = 6 mA 220 300 380 RF Characteristics 2 Insertion Pow er Gain S21e VCE = 3 V, IC = 20 mA, f = 5.8 GHz 6.0 8.5 dB VCE = 2 V, IC = 6 mA, f = 2.4 GHz, Noise Figure (1) NF 0.6 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, Noise Figure (2) NF 0.95 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, Noise Figure (3) NF 1.1 1.5 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 2.4 GHz, Associated Gain (1) Ga 16.0 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.2 GHz, Associated Gain (2) Ga 10.0 dB ZS = ZSopt, ZL = ZLopt VCE = 2 V, IC = 6 mA, f = 5.8 GHz, Associated Gain (3) Ga 7.5 9.5 dB ZS = ZSopt, ZL = ZLopt Note 2 Reverse Transfer Capacitance Cre VCB = 2 V, IE = 0 mA, f = 1 MHz 0.15 0.25 pF Note Maximum Stable Pow er Gain MSG VCE = 3 V, IC = 20 mA, f = 5.8 GHz 11.0 14.0 dB 3 VCE = 3 V, IC (set) = 20 mA, Gain 1 dB Compression Output PO (1 dB) 13.0 dBm f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt Pow er Output 3rd Order Intercept Point VCE = 3 V, IC (set) = 20 mA, OIP3 18.0 dBm f = 5.8 GHz, ZS = ZSopt, ZL = ZLopt Notes 1. Pulse measurement: PW 350 s, Duty Cycle 2% 2. Collector to base capacitance when the emitter grounded S21 3. MSG = S12 hFE CLASSIFICATION Rank FB Marking T1K hFE Value 220 to 380 Data Sheet PU10414EJ04V0DS 2