ATF-541M4 Low Noise Enhancement Mode Pseudomorphic HEMT in a Miniature Leadless Package Data Sheet Features Description High linearity performance Avago Technologies ATF541M4 is a high linearity, low 1 Single Supply Enhancement Mode Technology noise, single supply EPHEMT housed in a miniature leadless package. Very low noise figure The AT541M4F s small size and low profile makes it ideal Excellent uniformity in product specifications for the design of hybrid module and other space con 800 micron gate width straint devices. Miniature leadless package 1.4 mm x 1.2 mm x 0.7 mm The device can be used in applications such as TMA and Tapeand R eel packaging option available front end LNA for Cellular/PCS and WCDMA base sta tions, LNA and driver amplifiers for Wireless Data and Specifications 802.11b WLAN. 2 GHz 3V, 60 mA (Typ.) In addition, the devices superior RF performance at 35.8 dBm output 3rd order intercept higher frequency makes it an ideal candidate for high frequency applications such as WLL, 802.11a WLAN, 5 21.4 dBm output power at 1 dB gain compression 6 GHz UNII and HIPERLAN applications. 0.5 dB noise figure 17.5 dB associated gain MiniPak 1.4 mm x 1.2 mm Package Applications Low Noise Amplifier and Driver Amplifier for Cellular/ PCS and WCDMA Base Stations LNA and Driver Amplifier for WLAN, WLL/RLL and MMDS applications General purpose discrete EPHEMT for ultra low noise Pin Connections and Package Marking applications in the 450 MHz to 10 GHz frequency range Drain Source Pin 4 Pin Note: 1. Enhancement mode technology requires positive Vgs, thereby Rx eliminating the need for the negative gate voltage associated with Gate Source conventional depletion mode devices. Pin Pin 1 Note: Top View. Package marking provides orientation, product identification and date code. R = Device Type Code x = Date code character. A different character is assigned for each month and year. Rx 1 ATF-541M4 Absolute Maximum Ratings Symbol Parameter Units Absolute Maximum 2 V DrainSource Voltage V 5 DS 2 V GateSource Voltage V 5 t o +1 GS 2 V Gate Drain Voltage V 5 GD 2 I Drain Current mA 120 DS 5 I Gate Current mA 2 GS 3 P Total Power Dissipation mW 360 diss 5 P RF Input Power in max. (Vd=3V, Id=60mA) dBm 20 (Vd=0V, Id=0mA) dBm 20 T Channel Temperature C 150 CH T Storage Temperature C 65 to 150 STG 4 Thermal Resistance C/W 212 jc Notes: 1 0 0. V 1. Operation of this device above any one of these parameters may cause permanent damage. 100 2. Assumes DC quiescent conditions. 0.6V 3. Source lead temperature is 25C. Derate 4.7 mW/C for T > 74C. L 0 4. Thermal resistance measured using 150C Liquid Crystal Measurement method. 60 5. The device can handle +13 dBm RF Input Power provided I is GS 0.5V limited to 2 mA. I at P drive level is bias circuit dependent. See GS 1dB 40 applications section for additional information. 0 0.4V 0. V 0 0 1 4 5 6 V (V) DS Figure 1. Typical I-V Curves. (V = 0.1 V per step) GS 6, 7 Product Consistency Distribution Charts 0 0 Cpk = 0. 5 Cpk = 1.16 Stdev = 1.14 Stdev = 0. 0 40 40 - Std - Std + Std 160 160 0 0 0 0 15 16 1 1 1 0 5 41 GAIN (dB) OIP (dBm) Figure . Gain GHz, V, 60 mA. Figure . OIP GHz, V, 60 mA. LSL = 15.5, Nominal = 1 .5, USL = 1 .5 LSL = .0, Nominal = 5. Notes: 6. Distribution data sample size is 500 samples taken from 6 different wafers. F uture wafers allocated to this product may have nominal values anywhere between the upper and lower limits. 7. Measurements made on production test board. This circuit represents a trade off between an optimal noise match and a realizeable match based on production test equipment. Circuit losses have been de embedded from actual measurements. I (mA) DS