MAT03FH

Low Noise, Matched a Dual PNP Transistor MAT03 FEATURES PIN CONNECTION Dual Matched PNP Transistor TO-78 Low Offset Voltage: 100
V Max (H Suffix) Low Noise: 1 nV/Hz @ 1 kHz Max High Gain: 100 Min High Gain Bandwidth: 190 MHz Typ Tight Gain Matching: 3% Max Excellent Logarithmic Conformance: r
0.3  typ BE GENERAL DESCRIPTION Each transistor is individually tested to data sheet specifications. The MAT03 dual monolithic PNP transistor offers excellent Device performance is guaranteed at 25C and over the extended parametric matching and high frequency performance. Low industrial and military temperature ranges. To ensure the long- noise characteristics (1 nV/Hz max @ 1 kHz), high bandwidth term stability of the matching parameters, internal protection (190 MHz typical), and low offset voltage (100 V max), makes diodes across the base-emitter junction clamp any reverse base- the MAT03 an excellent choice for demanding preamplifier appli- emitter junction potential. This prevents a base-emitter breakdown cations. Tight current gain matching (3% max mismatch) and condition that can result in degradation of gain and matching high current gain (100 min), over a wide range of collector cur- performance due to excessive breakdown current. rent, makes the MAT03 an excellent choice for current mirrors. A low value of bulk resistance (typically 0.3 ) also makes the MAT03 an ideal component for applications requiring accurate logarithmic conformance. REV. C Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. use, nor for any infringements of patents or other rights of third parties that may result from its use. No license is granted by implication or otherwise Tel: 781/329-4700 www.analog.com under any patent or patent rights of Analog Devices. Fax: 781/326-8703 Analog Devices, Inc., 2002MAT03SPECIFICATIONS ELECTRICAL CHARACTERISTICS (@ T = 25C, unless otherwise noted.) A MAT03E MAT03F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit 1 Current Gain h V = 0 V, 36 V FE CB I = 1 mA 100 165 80 165 C I = 100 A 90 150 70 150 C I = 10 A 80 120 60 120 C 2 Current Gain Matching Dh I = 100 A,V = 0 V 0.5 3 0.5 6 % FE C CB 3 Offset Voltage V V = 0 V, I = 100 A 40 100 40 200 V OS CB C Offset Voltage Change V / V I = 100 A OS CB C vs. Collector Voltage V = 0 V 11 150 11 200 V CB1 V = 36 V 11 150 11 200 V CB2 Offset Voltage Change V / I V = 0 V 12 50 12 75 V OS C CB vs. Collector Current I = 10 A, I = 1 mA 12 50 12 75 V C1 C2 Bulk Resistance r V = 0 V 0.3 0.75 0.3 0.75 BE CB 10 A I 1 mA 0.3 0.75 0.3 0.75 C Offset Current I I = 100 A, V = 0 V 6 35 6 45 nA OS C CB Collector-Base Leakage Current I V = 36 V = V 50 200 50 400 pA CB0 CB MAX 4 Noise Voltage Density e I = 1 mA, V = 0 N C CB f = 10 Hz 0.8 0.8 nV/Hz O f = 100 Hz 0.7 0.7 nV/Hz O f = 1 kHz 0.7 0.7 nV/Hz O f = 10 kHz 0.7 0.7 nV/Hz O Collector Saturation Voltage V I = 1 mA, I = 100 A 0.025 0.1 0.025 0.1 V CE(SAT) C B (@ 40C T 85C, unless otherwise noted.) ELECTRICAL CHARACTERISTICS A MAT03E MAT03F Parameter Symbol Conditions Min Typ Max Min Typ Max Unit Current Gain h V = 0 V, 36 V FE CB I = 1 mA 70 120 60 120 C I = 100 A 60 105 50 105 C I = 10 A 5090 4090 C Offset Voltage V I = 100 A, V = 0 V 30 135 30 265 V OS C CB 5 Offset Voltage Drift TCV I = 100 A, V = 0 V 0.3 0.5 0.3 1.0 V/C OS C CB Offset Current I I = 100 A, V = 0 V 1085 10200 nA OS C CB Breakdown Voltage BV 36 36 V CEO NOTES 1 Current gain is measured at collector-base voltages (V ) swept from 0 to V at indicated collector current. Typicals are measured at V = 0 V. CB MAX CB 100 ( I ) h (min ) B FE 2 Current gain matching ( h ) is defined as: h FE FE = . I C I C1 KT 3 Offset voltage is defined as: V = V V , where V is the differential voltage for I = I : V = V V = In . OS BE1 BE2 OS C1 C2 OS BE1 BE2 q I C2 4 Sample tested. Noise tested and specified as equivalent input voltage for each transistor. 5 Guaranteed by V test (TCV = V /T for V
V ) where T = 298K for T = 25C. OS OS OS OS BE A Specifications subject to change without notice. REV. C 2