16-Bit, 8-Channel, 250 kSPS PulSAR ADC Known Good Die AD7689-KGD FEATURES FUNCTIONAL BLOCK DIAGRAM 2.3V TO 5.5V 0.5V TO VDD 0.5V 0.5V TO VDD 16-bit resolution with no missing codes 0.1F 10F 8-channel multiplexer with choice of inputs REFIN REF VDD Unipolar single-ended 1.8V Differential (GND sense) TO BAND GAP VIO Pseudobipolar VDD REF AD7689-KGD Throughput: 250 kSPS TEMP SENSOR INL: 2.5 LSB minimum, 0.4 LSB typical, +2.5 LSB maximum IN0 CNV Dynamic range: 93.8 dB IN1 SCK SINAD: 91 dB typical at 20 kHz, V = 5 V IN2 16-BIT SAR SPI SERIAL REF MUX IN3 ADC INTERFACE SDO THD: 100 dB at 20 kHz IN4 ONE-POLE DIN IN5 Analog input range: 0 V to V with V up to VDD REF REF LPF IN6 SEQUENCER IN7 Multiple reference types COM Internal selectable 2.5 V or 4.096 V GND External buffered (up to 4.096 V) External (up to VDD) Figure 1. Composite View Internal temperature sensor (TEMP) Channel sequencer, selectable 1-pole filter, busy indicator GENERAL DESCRIPTION No pipeline delay, SAR architecture The AD7689-KGD is an 8-channel, 16-bit, charge redistribution Single-supply 2.3 V to 5.5 V operation with 1.8 V to 5.5 V successive approximation register (SAR) analog-to-digital logic interface converter (ADC) that operates from a single power supply, VDD. Serial interface compatible with SPI, MICROWIRE, QSPI, The AD7689-KGD contains all components for use in a multi- and DSP channel, low power data acquisition system, including a true Power dissipation 16-bit SAR ADC with no missing codes an 8-channel low 3.5 mW typical at 2.5 V, 200 kSPS crosstalk multiplexer that is useful for configuring the inputs 12.5 mW typical at 5 V, 250 kSPS as single-ended (with or without ground sense), differential, or Standby current: 50 nA bipolar an internal low drift reference (selectable 2.5 V or 4.096 V) Low cost grade available and buffer a temperature sensor a selectable one-pole filter Known Good Die (KGD): these die are fully guaranteed to and a sequencer that is useful when channels are continuously data sheet specifications. scanned in order. APPLICATIONS The AD7689-KGD uses a simple SPI interface for writing to the Multichannel system monitoring configuration register and receiving conversion results. The SPI Battery-powered equipment interface uses a separate supply, VIO, which is set to the host Medical instruments: ECG/EKG logic level. Power dissipation scales with throughput. Mobile communications: GPS The AD7689-KGD is specified from 40C to +125C. Power line monitoring Additional application and technical information can be found Data acquisition in the AD7689 data sheet. Seismic data acquisition systems Instrumentation Process control Rev. D Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. rights of third parties that may result from its use. Specifications subject to change without notice. No Tel: 781.329.4700 20172019 Analog Devices, Inc. All rights reserved. license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Technical Support www.analog.com Trademarks and registered trademarks are the property of their respective owners. 15658-005AD7689-KGD Known Good Die TABLE OF CONTENTS Features .............................................................................................. 1 Absolute Maximum Ratings ............................................................8 Applications ....................................................................................... 1 ESD Caution...................................................................................8 Functional Block Diagram .............................................................. 1 Pin Configuration and Function Descriptions ..............................9 General Description ......................................................................... 1 Outline Dimensions ....................................................................... 10 Revision History ............................................................................... 2 Die Specifications and Assembly Recommendations ........... 10 Specif icat ions ..................................................................................... 3 Ordering Guide .......................................................................... 10 Timing Specifications .................................................................. 6 REVISION HISTORY 7/2019Rev. C to Rev. D 2/2018Rev. A to Rev. B Changes to Features Section and General Description Section ... 1 Changes to Features Section ............................................................ 1 Changes to Integral Linearity Error Parameter, Offset Error Changes to Table 1 ............................................................................. 3 Parameter, Signal-to-Noise Ratio (SNR) Parameter, and Signal- to-Noise-and-Distortion Ratio (SINAD) Parameter, Table 1 ..... 3 10/2017Rev. 0 to Rev. A Changes to Power Dissipation Parameter and Temperature Changed Metal Mask Die Image Section to Functional Block Range Parameter, Table 2 ................................................................. 5 Diagram Section ................................................................................ 1 Change to Conversion Time Parameter, Table 3 .......................... 6 Changes to Figure 1 ........................................................................... 1 Changes to Conversion time Parameter, Falling Edge to Data Valid Relay Parameter, and Low SDO D15 MSB Valid 7/2017Revision 0: Initial Version Parameter, Table 4 ............................................................................. 7 Changes to Ordering Guide .......................................................... 10 1/2019Rev. B to Rev. C Changes to Gain Error Match Parameter, Table 1 and Offset Error Match, Table 1 ......................................................................... 3 Changes to CNV Rising Edge to Data Available Parameter, Table 3 ................................................................................................ 6 Changes to CNV Rising Edge to Data Available Parameter, Table 4 ................................................................................................ 7 Rev. D Page 2 of 10