AON7408 30V N-Channel MOSFET General Description Product Summary V 30V The AON7408 uses advanced trench technology and DS design to provide excellent R with low gate charge. DS(ON) I (at V =10V) 18A D GS This device is suitable for use in general purpose R (at V =10V) < 20m DS(ON) GS applications. R (at V =4.5V) < 32m DS(ON) GS RoHS and Halogen-Free Compliant 100% UIS Tested 100% R Tested g D DFN 3x3 EP Top View Bottom View Top View 1 8 2 7 3 6 4 G 5 S Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Symbol Maximum Units DDrraaiinn--SSoouurrccee VVoollttaaggee VV 3300 VV DS Gate-Source Voltage V 20 V GS T =25C 18 Continuous Drain C I D B Current T =100C 11.5 A C C Pulsed Drain Current I 64 DM T =25C Continuous Drain 10 A I A DSM A T =70C Current 8 A T =25C 11 C P W D B Power Dissipation T =100C 4.5 C T =25C 3.1 A P W DSM A T =70C Power Dissipation 2 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 25 40 C/W R JA A Steady-State Maximum Junction-to-Ambient 62 75 C/W B Steady-State R 8.8 11 C/W Maximum Junction-to-Case JC Rev.8.0: November 2013 www.aosmd.com Page 1 of 6 AON7408 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 30 V D GS DSS V =30V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V =20V I Gate-Body leakage current 100 nA GSS DS GS V V =V I =250A Gate Threshold Voltage 1.5 2.1 2.6 V GS(th) DS GS D I On state drain current V =10V, V =5V 64 A GS DS D(ON) V =10V, I =10A 15.3 20 GS D m R Static Drain-Source On-Resistance T =125C 23.3 30 DS(ON) J V =4.5V, I =5A 22.7 32 m GS D V =5V, I =10A g Forward Transconductance 17 S FS DS D V Diode Forward Voltage I =1A,V =0V 0.75 1 V S GS SD I Maximum Body-Diode Continuous Current 12 A S DYNAMIC PARAMETERS C Input Capacitance 373 448 pF iss V =0V, V =15V, f=1MHz C Output Capacitance 67 pF oss GS DS C Reverse Transfer Capacitance 41 pF rss R Gate resistance V =0V, V =0V, f=1MHz 0.6 1.8 2.8 g GS DS SWITCHING PARAMETERS Q Total Gate Charge 7.1 8.6 nC g V =4.5V, V =15V, I =10A Q Gate Source Charge 1.2 nC gs GS DS D Q Gate Drain Charge 1.6 nC gd t Turn-On DelayTime 4.3 ns D(on) t Turn-On Rise Time V =10V, V =15V, R =1.5, 2.8 ns r GS DS L RR ==33 tt TTuurrnn--OOffff DDeellaayyTTiimmee 1155..88 nnss D(off) GEN t Turn-Off Fall Time 3 ns f t I =10A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 10.5 12.6 ns Q I =10A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 4.5 A: The value of R is measured with the device in a still air environment with T =25 C. The power dissipation P and current rating I are JA A DSM DSM based on T =150 C, using t 10s junction-to-ambient thermal resistance. J(MAX) B. The power dissipation P is based on T =150 C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =150 C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) 2 G. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. A H. The maximum current rating is limited by bond-wires. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.8.0: November 2013 www.aosmd.com Page 2 of 6