AOD407 P-Channel Enhancement Mode Field Effect Transistor General Description Features The AOD407 uses advanced trench technology to V (V) = -60V DS provide excellent R , low gate charge and low I = -12A (V = -10V) DS(ON) D GS gate resistance. With the excellent thermal resistance R < 115m (V = -10V) DS(ON) GS of the DPAK package, this device is well suited for R < 150m (V = -4.5V) DS(ON) GS high current load applications. 100% UIS tested -RoHS Compliant 100% RG tested -Halogen Free* TO252 DPAK Top View Bottom View D D D G S G S S G Absolute Maximum Ratings T =25C unless otherwise noted A Parameter Maximum Units Symbol Drain-Source Voltage V -60 V DS V Gate-Source Voltage 20 V GS Continuous Drain T =25C -12 C G Current T =100C I -10 A C D C Pulsed Drain Current I -30 DM C Avalanche Current I -12 A AR C Repetitive avalanche energy L=0.1mH E 23 mJ AR T =25C 50 C P W D B Power Dissipation T =100C 25 C T =25C 2.5 A P W DSM A Power Dissipation T =70C 1.6 A T , T Junction and Storage Temperature Range -55 to 175 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A t 10s Maximum Junction-to-Ambient 16.7 25 C/W R JA A Steady-State Maximum Junction-to-Ambient 40 50 C/W B Steady-State R 2.5 3 C/W Maximum Junction-to-Case JC Alpha & Omega Semiconductor, Ltd.AOD407 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =-250A, V =0V -60 V DSS D GS V =-48V, V =0V -0.003 -1 DS GS I Zero Gate Voltage Drain Current A DSS =55C T -5 J I Gate-Body leakage current V =0V, V =20V 100 nA GSS DS GS V =V I =-250A -1.5 -2.1 -3 V Gate Threshold Voltage V GS(th) DS GS D I On state drain current V =-10V, V =-5V -30 A D(ON) GS DS V =-10V, I =-12A 91 115 GS D m =125C R Static Drain-Source On-Resistance T 150 DS(ON) J m V =-4.5V, I =-8A 114 150 GS D g V =-5V, I =-12A 12.8 S Forward Transconductance FS DS D V Diode Forward Voltage I =-1A,V =0V -0.76 -1 V SD S GS I Maximum Body-Diode Continuous Current -12 A S DYNAMIC PARAMETERS C Input Capacitance 987 1185 pF iss C Output Capacitance V =0V, V =-30V, f=1MHz 114 pF oss GS DS C Reverse Transfer Capacitance 46 pF rss R Gate resistance V =0V, V =0V, f=1MHz 710 g GS DS SWITCHING PARAMETERS Q (10V) Total Gate Charge (10V) 15.8 20 nC g Q (4.5V) 7.4 9 nC Total Gate Charge (4.5V) g V =-10V, V =-30V, I =-12A GS DS D Q Gate Source Charge 3nC gs Q Gate Drain Charge 3.5 nC gd t Turn-On DelayTime 9ns D(on) t Turn-On Rise Time V =-10V, V =-30V, R =2.5, 10 ns r GS DS L t Turn-Off DelayTime R =3 25 ns GEN D(off) t Turn-Off Fall Time 11 ns f t I =-12A, dI/dt=100A/s 27.5 rr Body Diode Reverse Recovery Time F 35 ns Q I =-12A, dI/dt=100A/s 30 nC rr Body Diode Reverse Recovery Charge F A: The value of R is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The JA A Power dissipation P is based on R and the maximum allowed junction temperature of 150C. The value in any given application DSM JA depends on the user s specific board design, and the maximum temperature of 175C may be used if the PCB allows it. B. The power dissipation P is based on T =175C, using junction-to-case thermal resistance, and is more useful in setting the upper D J(MAX) dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T =175C. J(MAX) D. The R is the sum of the thermal impedence from junction to case R and case to ambient. JA JC E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T =175C. J(MAX) G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T =25C. The SOA A curve provides a single pulse rating. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev 7 : May 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd.