AO8820 20V Common-Drain Dual N-Channel MOSFET General Description Product Summary V 20V The AO8820 uses advanced trench technology to provide DS excellent R , low gate charge and operation with gate DS(ON) I (at V =10V) 7A D GS voltages as low as 1.8V while retaining a 12V V GS(MAX) R (at V =10V) < 21m DS(ON) GS rating. It is ESD protected. This device is suitable for use R (at V =4.5V) < 24m DS(ON) GS as a uni-directional or bi-directional load switch, facilitated R (at V =3.6V) < 28m DS(ON) GS by its common-drain configuration. R (at V =2.5V) < 32m DS(ON) GS R (at V =1.8V) < 50m DS(ON) GS ESD protected D1 D2 TSSOP8 Top View Bottom View Top View D1/D2 8 D1/D2 1 S1 2 7 S2 G1 G2 3 6 S1 S2 4 5 G1 G2 S1 S2 Pin 1 Absolute Maximum Ratings T =25C unless otherwise noted A PPaarraammeetteerr SSyymmbbooll MMaaxxiimmuumm UUnniittss Drain-Source Voltage V 20 V DS Gate-Source Voltage V 12 V GS T =25C 7 A Continuous Drain I D Current T =70C 5.5 A A C Pulsed Drain Current I 30 DM T =25C 1.5 A P W D B Power Dissipation T =70C 0.96 A Junction and Storage Temperature Range T , T -55 to 150 C J STG Thermal Characteristics Parameter Symbol Typ Max Units A Maximum Junction-to-Ambient t 10s 64 83 C/W R A D JA Maximum Junction-to-Ambient Steady-State 89 120 C/W Maximum Junction-to-Lead Steady-State R 53 70 C/W JL Rev 7: April. 2012 www.aosmd.com Page 1 of 5 AO8820 Electrical Characteristics (T =25C unless otherwise noted) J Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV Drain-Source Breakdown Voltage I =250A, V =0V 20 V D GS DSS V =16V, V =0V 1 DS GS I Zero Gate Voltage Drain Current A DSS T =55C 5 J V =0V, V = 10V I Gate-Body leakage current 10 A GSS DS GS V V =V I =250A Gate Threshold Voltage 0.5 0.8 1.1 V GS(th) DS GS D I On state drain current V =10V, V =5V 30 A GS DS D(ON) V =10V, I =7A 13 17.2 21 GS D T =125C 24 29 J V =4.5V, I =6.6A 15 19.4 24 GS D R Static Drain-Source On-Resistance m DS(ON) V =3.6V, I =6A 16 20.7 28 GS D V =2.5V, I =5.5A 18 25 32 GS D V =1.8V, I =2A 35 50 GS D g Forward Transconductance V =5V, I =7A 25 S FS DS D I =1A,V =0V V Diode Forward Voltage 0.65 1 V SD S GS I Maximum Body-Diode Continuous Current 2.5 A S DYNAMIC PARAMETERS C Input Capacitance 500 pF iss C Output Capacitance V =0V, V =10V, f=1MHz 100 pF GS DS oss C Reverse Transfer Capacitance 52 pF rss SWITCHING PARAMETERS Q Total Gate Charge 6 9 nC g Q Gate Source Charge V =4.5V, V =10V, I =7A 2 nC GS DS D gs Q Gate Drain Charge 1 nC gd tt TTuurrnn--OOnn DDeellaayyTTiimmee 00..22 uuss D(on) t Turn-On Rise Time V =5V, V =10V, R =1.4, 1.5 us r GS DS L R =3 t Turn-Off DelayTime 7.4 us GEN D(off) t Turn-Off Fall Time 18 us f t I =7A, dI/dt=100A/s rr Body Diode Reverse Recovery Time F 9 ns Q I =7A, dI/dt=100A/s nC rr Body Diode Reverse Recovery Charge F 10 2 A. The value of R is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T =25 C. The JA A value in any given application depends on the user s specific board design. B. The power dissipation P is based on T =150 C, using 10s junction-to-ambient thermal resistance. D J(MAX) C. Repetitive rating, pulse width limited by junction temperature T =150 C. Ratings are based on low frequency and duty cycles to keep J(MAX) initialT =25 C. J D. The R is the sum of the thermal impedence from junction to lead R and lead to ambient. JA JL E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max. 2 F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in FR-4 board with 2oz. Copper, assuming a maximum junction temperature of T =150 C. The SOA curve provides a single pulse rating. J(MAX) THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 7: April. 2012 www.aosmd.com Page 2 of 5