Product Information

1199819

1199819 electronic component of Phoenix Contact

Datasheet
EEPROM 512x8 - 5V

Manufacturer: Phoenix Contact
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (AUD)

50: AUD 0.979 ( AUD 1.08 Inc GST) ea
Line Total: AUD 48.95 ( AUD 53.84 Inc GST)

9700 - Global Stock
Ships to you between
Fri. 02 Aug to Mon. 02 Sep
MOQ: 50  Multiples: 50
Pack Size: 50
Availability Price Quantity
582 - Global Stock


Ships to you between Wed. 17 Jul to Fri. 19 Jul

MOQ : 1
Multiples : 1

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1199819
Phoenix Contact

1 : AUD 1.1182
100 : AUD 1.104
500 : AUD 1.0969

9700 - Global Stock


Ships to you between
Fri. 02 Aug to Mon. 02 Sep

MOQ : 50
Multiples : 50

Stock Image

1199819
Phoenix Contact

50 : AUD 0.979

     
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Supply Voltage - Max
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Notes:- Show Stocked Products With Similar Attributes.

25XX040 25XX040 25XX040 25AA040/25LC040/25C040 4K SPI Bus Serial EEPROM Communication to the device can be paused via the Device Selection Table hold pin (HOLD). While the device is paused, transi- tions on its inputs will be ignored, with the exception of Part VCC Max. Clock Temp. Number Range Frequency Ranges Chip Select, allowing the host to service higher priority interrupts. Also, write operations to the device can be 25AA040 1.8-5.5V 1 MHz I disabled via the write-protect pin (WP). 25LC040 2.5-5.5V 2 MHz I Package Types 25C040 4.5-5.5V 3 MHz I,E PDIP CS 1 8 VCC Features SO 2 7 HOLD Low-power CMOS technology WP 3 6 SCK - Write current: 3 mA typical VSS 4 5 SI - Read current: 500 A typical - Standby current: 500 nA typical SOIC CS 1 8 VCC 512 x 8-bit organization SO 2 7 HOLD 16 byte page WP 3 6 SCK Write cycle time: 5 ms max. VSS 4 5 SI Self-timed ERASE and WRITE cycles Block write protection TSSOP - Protect none, 1/4, 1/2 or all of array 1 8 HOLD SCK Built-in write protection 2 7 VCC SI - Power on/off data protection circuitry 3 6 CS VSS - Write enable latch 4 5 SO WP - Write-protect pin Sequential read Block Diagram High reliability Status - Endurance: 1M cycles HV Generator Register - Data retention: > 200 years - ESD protection: > 4000V 8-pin PDIP, SOIC, and TSSOP packages Temperature ranges supported: EEPROM - Industrial (I): -40Cto +85C Memory I/O Control Array - Automotive (E) (25C040): -40C to +125C Control Logic XDEC Logic Description Page Latches The Microchip Technology Inc. 25AA040/25LC040/ * 25C040 (25XX040) is a 4 Kbit serial Electrically SI Erasable PROM. The memory is accessed via a simple SO Y Decoder Serial Peripheral Interface (SPI) compatible serial bus. The bus signals required are a clock input (SCK) CS plus separate data in (SI) and data out (SO) lines. SCK Access to the device is controlled through a Chip Sense Amp. HOLD Select (CS) input. R/W Control WP *25XX040 is used in this document as a generic part number VCC for the 25AA040/25LC040/25C040 devices. SPI is a VSS trademark of Motorola Corporation. 2003 Microchip Technology Inc. DS21204D-page 125AA040/25LC040/25C040 1.0 ELECTRICAL CHARACTERISTICS () Absolute Maximum Ratings VCC.............................................................................................................................................................................7.0V All inputs and outputs w.r.t. VSS .......................................................................................................... -0.6V to VCC+1.0V Storage temperature .................................................................................................................................-65C to 150C Ambient temperature under bias...............................................................................................................-65C to 125C ESD protection on all pins......................................................................................................................................... 4 KV NOTICE: Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for an extended period of time may affect device reliability TABLE 1-1: DC CHARACTERISTICS Industrial (I): TA = -40C to +85C VCC = 1.8V to 5.5V DC CHARACTERISTICS Automotive (E): TA = -40C to +125C VCC = 4.5V to 5.5V (25C040 only) Param. Sym. Characteristic Min. Max. Units Test Conditions No. D001 VIH1 High-level input 2.0 VCC+1 V VCC 2.7V (Note) voltage D002 VIH2 0.7 VCC VCC+1 V VCC< 2.7V (Note) D003 VIL1 Low-level input -0.3 0.8 V VCC 2.7V (Note) voltage D004 VIL2 -0.3 0.3 VCC VVCC < 2.7V (Note) D005 VOL Low-level output 0.4 VIOL = 2.1 mA voltage D006 VOL 0.2 VIOL = 1.0 mA, VCC < 2.5V D007 VOH High-level output VCC -0.5 V IOH =-400 A voltage D008 ILI Input leakage current 1 ACS = VCC, VIN = VSS TO VCC D009 ILO Output leakage 1 ACS = VCC, VOUT = VSS TO VCC current D010 CINT Internal Capacitance A = 25C, CLK = 1.0 MHz, 7 pFT (all inputs and VCC = 5.0V (Note) outputs) D011 ICC Read Operating Current 1 mA VCC = 5.5V FCLK = 3.0 MHz SO = Open 500 A VCC = 2.5V FCLK = 2.0 MHz SO = Open D012 ICC Write 5 mA VCC = 5.5V 3 mA VCC = 2.5V D013 ICCS Standby Current 5 A CS = VCC = 5.5V, Inputs tied to VCC or 1 A VSS CS = VCC = 2.5V, Inputs tied to VCC or VSS Note: This parameter is periodically sampled and not 100% tested. DS21204D-page 2 2003 Microchip Technology Inc.

Tariff Desc

8542.32.00 32 No ..CMOS and MOS Read Only Memory and Programmable Read Only Memory whether erasable or non-erasable (for example, flash memory, EPROM, E2PROM, EAPROM, NOVRAM, ROM and PROM)

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