BPW85 Vishay Telefunken Silicon NPN Phototransistor Description BPW85 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T1 ( 3 mm) plastic package. Due to its waterclear epoxy the device is sensitive to visible and near infrared radi- ation. The viewing angle of 25 makes it insensible to ambi- ent straylight. Features Fast response times High photo sensitivity 94 8396 Standard T1 ( 3 mm ) clear plastic package Axial terminals Angle of half sensitivity = 25 Suitable for visible and near infrared radiation Selected into sensitivity groups Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T = 25 C amb Parameter Test Conditions Symbol Value Unit Collector Emitter Voltage V 70 V CEO Emitter Collector Voltage V 5 V ECO Collector Current I 50 mA C Peak Collector Current t /T = 0.5, t 10 ms I 100 mA p p CM Total Power Dissipation T 55 C P 100 mW amb tot Junction Temperature T 100 C j Storage Temperature Range T 55...+100 C stg Soldering Temperature t 3 s, 2 mm from case T 260 C sd Thermal Resistance Junction/Ambient R 450 K/W thJA Document Number 81531 www.vishay.de FaxBack +1-408-970-5600 Rev. 3, 16-Nov-99 1 (6)BPW85 Vishay Telefunken Basic Characteristics T = 25 C amb Parameter Test Conditions Symbol Min Typ Max Unit Collector Emitter Breakdown I = 1 mA V 70 V C (BR)CE Voltage O Collector Dark Current V = 20 V, E = 0 I 1 200 nA CE CEO Collector Emitter Capacitance V = 5 V, f = 1 MHz, E = 0 C 3 pF CE CEO Angle of Half Sensitivity 25 deg Wavelength of Peak Sensitivity 850 nm p Range of Spectral Bandwidth 620...980 nm 0.5 2 Collector Emitter Saturation E = 1 mW/cm , V 0.3 V e CEsat Voltage = 950 nm, I = 0.1 mA C TurnOn Time V = 5 V, I = 5 mA, t 2.0 s S C on R = 100 L TurnOff Time V = 5 V, I = 5 mA, t 2.3 s S C off R = 100 L CutOff Frequency V = 5 V, I = 5 mA, f 180 kHz S C c R = 100 L Type Dedicated Characteristics T = 25 C amb Parameter Test Conditions Type Symbol Min Typ Max Unit 2 Collector Light Currentg E =1mW/cm , BPW85A I 0.8 1.5 2.5 mA ee ca =950nm, V =5V CE BPW85B I 1.5 2.5 4.0 mA ca BPW85C I 3.0 5.0 8.0 mA ca Typical Characteristics (T = 25 C unless otherwise specified) amb 4 125 10 100 3 10 75 V =20V CE 2 R thJA 10 50 1 10 25 0 0 10 100 100 020 4060 80 20 40 60 80 94 8308 T Ambient Temperature ( C ) 94 8304 T Ambient Temperature ( C ) amb amb Figure 1. Total Power Dissipation vs. Ambient Temperature Figure 2. Collector Dark Current vs. Ambient Temperature www.vishay.de FaxBack +1-408-970-5600 Document Number 81531 2 (6) Rev. 3, 16-Nov-99 P Total Power Dissipation ( mW ) tot I Collector Dark Current ( nA ) CEO